Cleaning liquid for lithography and method for forming wiring
US9920286B2 · kind B2 · utility
2Cited by
2References
19Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Mar 29, 2016 |
| Grant date | Mar 20, 2018 |
| Priority date | — |
| Expiry date | May 28, 2036 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/02068
- WIPO fieldBasic materials chemistry
- WIPO sectorChemistry
Abstract
A cleaning liquid for lithography, and a method for forming a wiring using the cleaning liquid for lithography. The cleaning liquid for includes an alkali or an acid, a solvent, and a silicon compound generating a silanol group through hydrolysis. The method forms a metal wiring layer by embedding a metal in an etching space formed in a low dielectric constant layer of a semiconductor multilayer laminate. In this method, the semiconductor multilayer laminate is cleaned using the cleaning liquid for lithography, after formation of the etching space.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.