Heat treatment method and heat treatment apparatus for heating substrate by irradiating substrate with light
US9920993B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | May 10, 2012 |
| Grant date | Mar 20, 2018 |
| Priority date | — |
| Expiry date | May 22, 2033 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/67248
- WIPO fieldThermal processes and apparatus
- WIPO sectorMechanical engineering
Abstract
A photodetector element for receiving radiated light from a surface of a semiconductor wafer loses a detection function because the intensity of the received light exceeds a detection limit while a flash lamp emits light. Measurement is not performed during the above-mentioned period, and the intensity of the radiated light from the surface of the semiconductor wafer is measured after the flash lamp stops emitting light and the photodetector element restores the detection function. Then, the temperature of the surface of the semiconductor wafer heated by irradiation with a flash of light is calculated based on the measured intensity of the radiated light. Accordingly, even in a case where intense irradiation is performed in an extremely short period of time, such as flash irradiation, the flash of light does not act as ambient light, which enables to obtain the surface temperature of the semiconductor wafer.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.