Patent · US Active

Mask blank and mask and fabrication method thereof

US9921467B2 · kind B2 · utility

2Cited by
0References
20Claims
0Family size

Assignee

Inventors

Key dates

Filing dateNov 30, 2015
Grant dateMar 20, 2018
Priority date
Expiry dateApr 24, 2036

Classification

  • Technology area (CPC H)Electricity
  • CPC primaryH01L21/0338
  • WIPO fieldSemiconductors
  • WIPO sectorElectrical engineering

Abstract

A mask blank and a mask are provided. The mask blank includes a substrate, and an etching stop layer embedded in the substrate. The mask includes the mask blank with the embedded etching stop layer, and a plurality of recesses formed in the mask blank. The recess exposes the embedded etching stop layer.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.