Patent · US Active

Memory device

US9922728B2 · kind B2 · utility

5Cited by
2References
14Claims
0Family size

Assignee

Inventors

Key dates

Filing dateMar 10, 2016
Grant dateMar 20, 2018
Priority date
Expiry dateApr 14, 2036

Classification

  • Technology area (CPC G)Physics
  • CPC primaryG11C2211/4062
  • WIPO fieldComputer technology
  • WIPO sectorElectrical engineering

Abstract

A memory device may include a plurality of memory cells; and an error detection unit suitable for latching first read data of one or more memory cells selected from the plurality of memory cells after refreshing the selected memory cells, in a first phase, and suitable for detecting errors of the selected memory cells before refreshing the selected memory cells, in a second phase.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.