Method of forming silicon film
US9922824B2 · kind B2 · utility
322Cited by
6References
18Claims
0Family size
Assignee
Inventor
Key dates
| Filing date | Dec 22, 2015 |
| Grant date | Mar 20, 2018 |
| Priority date | — |
| Expiry date | Mar 16, 2036 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/02592
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A method of forming a silicon film on a target surface of a target object, including: performing a gas process on the target surface of the target object using an oxygen gas and a hydrogen gas; forming the silicon film on the target surface to which the gas process has been performed, wherein the performing a gas process and the forming the silicon film are performed within a single processing chamber.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.