Apparatus and method for FinFETs
US9922828B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Jan 20, 2017 |
| Grant date | Mar 20, 2018 |
| Priority date | — |
| Expiry date | Jan 20, 2037 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D84/834
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A method comprises performing a surface treatment on a plurality of recesses in a substrate to form a first cloak-shaped recess, a second cloak-shaped recess and a third cloak-shaped recess, wherein each cloak-shaped recess is between two isolation regions over the substrate and growing a semiconductor material in the first cloak-shaped recess, the second cloak-shaped recess and the third cloak-shaped recess to form a first cloak-shaped active region, a second cloak-shaped active region and a third cloak-shaped active region, wherein the first cloak-shaped active region has a first non-planar top surface, the second cloak-shaped active region has a second non-planar top surface and the third cloak-shaped active region has a third non-planar top surface.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.