Semiconductor device manufacturing method
US9922858B2 · kind B2 · utility
1Cited by
1References
15Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Aug 7, 2015 |
| Grant date | Mar 20, 2018 |
| Priority date | — |
| Expiry date | Aug 7, 2035 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY10T156/1111
- WIPO fieldSurface technology, coating
- WIPO sectorChemistry
Abstract
Provided is a semiconductor device manufacturing method that includes joining a support substrate to a back side of a semiconductor wafer across a ceramic adhesive layer and a mask, to form a joined body. The method further includes forming a functional structure on a front side of the semiconductor wafer. The method further includes detaching the support substrate from the semiconductor wafer by removing the ceramic adhesive layer and the mask. The method further includes a back side processing step of carrying out back side processing on the back side of the semiconductor wafer.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.