Patent · US Active

Method of manufacturing element chip and element chip

US9922899B2 · kind B2 · utility

1Cited by
1References
13Claims
0Family size

Assignee

Inventors

Key dates

Filing dateJan 18, 2017
Grant dateMar 20, 2018
Priority date
Expiry dateJan 18, 2037

Classification

  • Technology area (CPC H)Electricity
  • CPC primaryH01L2223/5446
  • WIPO fieldSemiconductors
  • WIPO sectorElectrical engineering

Abstract

In a plasma processing step that is used in the method of manufacturing the element chip for manufacturing a plurality of element chips by dividing a substrate having a plurality of element regions, the substrate is divided into the element chips by exposing the substrate to first plasma. Therefore, the element chips having a first surface, a second surface, and a side surface on which a plurality of convex portions are formed are held spaced from each other on a carrier. A protection film is formed on the side surface of the element chip by exposing the element chip to second plasma, at least convex portions formed on the side surface are covered by the protection film in the protection film formation, and creep-up of a conductive material to the side surface is suppressed in the mounting step.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.