Patent · US Active

Method of forming stacked trench contacts and structures formed thereby

US9922930B2 · kind B2 · utility

5Cited by

7References

20Claims

0Family size

Assignee

Intel Corporation · US

Inventors

Bernhard Sell · Dresden, DE
Oleg Golonzka · Beaverton, US

Key dates

Filing date	Jan 30, 2017
Grant date	Mar 20, 2018
Priority date	—
Expiry date	Jan 30, 2037

Classification

Technology area (CPC H)Electricity
CPC primaryH01L2924/0002
WIPO fieldSemiconductors
WIPO sectorElectrical engineering

Abstract

Methods and associated structures of forming a microelectronic device are described. Those methods may include forming a structure comprising a first contact metal disposed on a source/drain contact of a substrate, and a second contact metal disposed on a top surface of the first contact metal, wherein the second contact metal is disposed within an ILD disposed on a top surface of a metal gate disposed on the substrate.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.