Threshold voltage modulation through channel length adjustment

US9922983B1 · kind B1 · utility

Assignee

• International Business Machines Corporation · US

Inventors

• Ruqiang Bao · Niskayuna, US
• Dechao Guo · Niskayuna, US
• Derrick Liu · Albany, US
• Huimei Zhou · Albany, US

Key dates

• Filing date: Sep 22, 2016
• Grant date: Mar 20, 2018
• Expiry date: Sep 22, 2036

Classification

• Technology area (CPC H): Electricity
• CPC primary: H10B41/41

Abstract

A method of forming an arrangement of long and short fins on a substrate, including forming a plurality of finFET devices having long fins on the substrate, where the long fins have a fin length in the range of about 180 nm to about 350 nm, and forming a plurality of finFET devices having short fins on the substrate, where the short fins have a fin length in the range of about 60 nm to about 140 nm, wherein at least one of the plurality of finFET devices having a long fin is adjacent to at least one of the plurality of finFET devices having a short fin.