Derrick Liu
26Patents
4h-index
40Co-inventors
59Inventor score
Filing activity: Dec 7, 2011 → Mar 31, 2022
Most-cited inventions
| Patent | Title | Area | Cited by | Status |
|---|---|---|---|---|
| US8871549B2 | Biological and chemical sensors | Electricity | 26 | Active |
| US9287264B1 | Epitaxially grown silicon germanium channel FinFET with silicon underlayer | Electricity | 11 | Active |
| US9922983B1 | Threshold voltage modulation through channel length adjustment | Electricity | 7 | Active |
| US9922984B1 | Threshold voltage modulation through channel length adjustment | Electricity | 4 | Active |
| US9881937B2 | Preventing strained fin relaxation | Electricity | 4 | Active |
| US9576979B2 | Preventing strained fin relaxation by sealing fin ends | Electricity | 3 | Active |
| US9312426B2 | Structure with a metal silicide transparent conductive electrode and a method of forming the structure | Emerging Cross-Sectional Technologies | 3 | Active |
| US9287000B1 | Three terminal fuse with FinFET | Electricity | 2 | Active |
| US10615278B2 | Preventing strained fin relaxation | Electricity | 2 | Active |
| US10147839B2 | Method of forming a metal silicide transparent conductive electrode | Emerging Cross-Sectional Technologies | 2 | Active |
| US10170477B2 | Forming MOSFET structures with work function modification | Electricity | 1 | Active |
| US9293221B1 | Three terminal fuse with FinFET | Electricity | 1 | Active |
| US10121853B2 | Structure and process to tuck fin tips self-aligned to gates | Electricity | 0 | Active |
| US11282186B2 | Anomaly detection using image-based physical characterization | Physics | 0 | Active |
| US10147725B2 | Forming MOSFET structures with work function modification | Electricity | 0 | Active |
| US11195969B2 | Method of forming a metal silicide transparent conductive electrode | Emerging Cross-Sectional Technologies | 0 | Active |
| US10263098B2 | Threshold voltage modulation through channel length adjustment | Electricity | 0 | Active |
| US10170593B2 | Threshold voltage modulation through channel length adjustment | Electricity | 0 | Active |
| USRE50174E1 | Structure and process to tuck fin tips self-aligned to gates | General | 0 | Active |
| US11056610B2 | Method of forming a metal silicide transparent conductive electrode | Emerging Cross-Sectional Technologies | 0 | Active |
| US10664966B2 | Anomaly detection using image-based physical characterization | Physics | 0 | Active |
| US10224419B2 | Threshold voltage modulation through channel length adjustment | Electricity | 0 | Active |
| US12285601B2 | Ex vivo method of manufacturing a wire structure electrode | Human Necessities | 0 | Active |
| US10121852B2 | Structure and process to tuck fin tips self-aligned to gates | Electricity | 0 | Active |
| US8679863B2 | Fine tuning highly resistive substrate resistivity and structures thereof | Electricity | 0 | Active |
Source: USPTO / EPO open patent data. Inventor disambiguation is heuristic; counts are objective bibliographic measures.