Infrared photosensor

US9923015B2 · kind B2 · utility

Assignee

• Robert Bosch GmbH · DE

Inventors

• Volkmar Senz · Metzingen, DE
• Michael Krueger · Littleton, US

Key dates

• Filing date: Sep 19, 2013
• Grant date: Mar 20, 2018
• Expiry date: Sep 19, 2033

Classification

• Technology area (CPC H): Electricity
• CPC primary: H10F99/00

Abstract

A thermal diode for a photosensor of a thermal imaging camera includes a semiconductor substrate having a surface and two doped structures set apart from each other on the surface. Furthermore, a device is provided for influencing a current between the first and the second structure, in order to reduce a current density in an area near to the surface and to increase it in an area far from the surface. In addition, a topology having an even absorption layer is proposed. The measures proposed have the aim of realizing a low-noise diode for thermal applications.