Array of optoelectronic structures and fabrication thereof
US9923022B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Jul 1, 2016 |
| Grant date | Mar 20, 2018 |
| Priority date | — |
| Expiry date | Jul 1, 2036 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10F77/1248
- WIPO fieldOptics
- WIPO sectorInstruments
Abstract
A method of fabrication of an array of optoelectronic structures. The method first provides a crystalline substrate having cells corresponding to individual optoelectronic structures to be obtained. Each of the cells comprises an opening to the substrate. Then, several first layer portions of a first compound semiconductor material are grown in each the opening to at least partly fill a respective one of the cells and form an essentially planar film portion therein. Next, several second layer portions of a second compound semiconductor material are grown over the first layer portionsthat coalesce to form a coalescent film extending over the first layer portions. Finally, excess portions of materials are removed, to obtain the array of optoelectronic structures. Each optoelectronic structure comprises a stack protruding from the substrate of: a residual portion of one of the second layer portions; and a residual portion of one of the first layer portions.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.