Film forming method and film forming apparatus
US9926624B2 · kind B2 · utility
3Cited by
0References
7Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Jun 23, 2015 |
| Grant date | Mar 27, 2018 |
| Priority date | — |
| Expiry date | Aug 20, 2035 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10K50/8445
- WIPO fieldElectrical machinery, apparatus, energy
- WIPO sectorElectrical engineering
Abstract
There is provided a method of forming a sealing film to seal a device formed on a substrate, including: supplying a mixture gas including a silicon-containing gas and a halogen element-containing gas or a mixture gas including a silicon-containing gas and a gas containing a functional group having an electronegative property stronger than that of nitrogen, as a first mixture gas, into a processing container; generating plasma of the first mixture gas within the processing container; and forming a first sealing film to cover the device using the first mixture gas activated by the plasma.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.