Method for growing B-Ga2O3-based single crystal
US9926646B2 · kind B2 · utility
2Cited by
1References
9Claims
0Family size
Assignees
Inventors
Key dates
| Filing date | Oct 9, 2013 |
| Grant date | Mar 27, 2018 |
| Priority date | — |
| Expiry date | Oct 9, 2033 |
Classification
- Technology area (CPC C)Chemistry; Metallurgy
- CPC primaryC30B29/16
- WIPO fieldSurface technology, coating
- WIPO sectorChemistry
Abstract
A method for growing a β-Ga2O3-based single crystal, can provide a plate-shaped β-Ga2O3-based single crystal having high crystal quality. In one embodiment, a method for growing a β-Ga2O3-based single crystal employing an EFG method is provided, the method including: bringing a plate-shaped seed crystal into contact with a Ga2O3-based melt, wherein the plate-shaped seed crystal includes a β-Ga2O3-based single crystal having a defect density of not more than 5×105 /cm2 in the whole region; and pulling up the seed crystal to grow a β-Ga2O3-based single crystal.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.