Atomic layer chemical patterns for block copolymer assembly
US9927706B2 · kind B2 · utility
Assignees
Inventors
Key dates
| Filing date | Jul 20, 2016 |
| Grant date | Mar 27, 2018 |
| Priority date | — |
| Expiry date | Jul 20, 2036 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01J2237/334
- WIPO fieldMacromolecular chemistry, polymers
- WIPO sectorChemistry
Abstract
Provided herein are methods of directed self-assembly (DSA) on atomic layer chemical patterns and related compositions. The atomic layer chemical patterns may be formed from two-dimensional materials such as graphene. The atomic layer chemical patterns provide high resolution, low defect directed self-assembly. For example, DSA on a graphene pattern can be used achieve ten times the resolution of DSA that is achievable on a three-dimensional pattern such as a polymer brush. Assembly of block copolymers on the atomic layer chemical patterns may also facilitate subsequent etch, as the atomic layer chemical patterns are easier to etch than conventional pattern materials.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.