Method of manufacturing semiconductor device
US9929005B1 · kind B1 · utility
Assignee
Inventors
Key dates
| Filing date | Dec 22, 2016 |
| Grant date | Mar 27, 2018 |
| Priority date | — |
| Expiry date | Dec 22, 2036 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/0234
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
Disclosed is a method of manufacturing a semiconductor device. The method includes: (a) accommodating a substrate having a plurality of carbon-containing films protruding from a surface of the substrate; (b) forming a silicon-containing film on a surface of the plurality of carbon-containing films and a surface of the substrate by supplying a silicon-containing gas to the substrate; (c) forming a silicon/oxygen-containing film by supplying a first plasma of an oxygen-containing gas to the substrate; and (d) forming a silicon oxide film by supplying a second plasma of the oxygen-containing gas to the substrate after performing (c).
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.