Patent · US Active

Device with optimized thermal characteristics

US9929115B2 · kind B2 · utility

0Cited by
5References
20Claims
0Family size

Assignee

Inventors

Key dates

Filing dateFeb 5, 2016
Grant dateMar 27, 2018
Priority date
Expiry dateFeb 5, 2036

Classification

  • Technology area (CPC H)Electricity
  • CPC primaryH01L2924/20649
  • WIPO fieldSemiconductors
  • WIPO sectorElectrical engineering

Abstract

A semiconductor device includes a semiconductor substrate, a conductive pad on the semiconductor substrate, and a conductor over the conductive pad. The semiconductor device further has a molding compound surrounding the semiconductor substrate, the conductive pad and the conductor. In the semiconductor device, the conductor has a stud shape.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.