Polysilicon diode bandgap reference
US9929150B2 · kind B2 · utility
0Cited by
3References
18Claims
0Family size
Assignee
Inventor
Key dates
| Filing date | Aug 9, 2012 |
| Grant date | Mar 27, 2018 |
| Priority date | — |
| Expiry date | Aug 9, 2032 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D8/411
Abstract
Representative implementations of devices and techniques provide a bandgap reference voltage using at least one polysilicon diode and no silicon diodes. The polysilicon diode is comprised of three portions, a lightly doped portion flanked by a more heavily doped portion on each end.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.