Semiconductor device having symmetric and asymmetric active fins
US9929155B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Dec 30, 2015 |
| Grant date | Mar 27, 2018 |
| Priority date | — |
| Expiry date | Dec 30, 2035 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D84/038
Abstract
A semiconductor device and a method of manufacturing the same are disclosed, which may improve the operating performance of a multi-gate transistor in a highly scaled integrated circuit device. The semiconductor device includes a first active fin unit protruding on a first region of a semiconductor substrate and extending along a first direction. The first active fin unit includes at least one first active fin having left and right profiles, which are symmetric to each other about a first center line perpendicular to a top surface of the semiconductor substrate on a cut surface perpendicular to the first direction. A second active fin unit protrudes on a second region of the semiconductor substrate and includes two second active fins, each having a left and right profiles, which are asymmetric to each other about a second center line perpendicular to the top surface of the semiconductor substrate on a cut surface.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.