Image sensor including vertical transfer gate
US9929194B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Mar 1, 2017 |
| Grant date | Mar 27, 2018 |
| Priority date | — |
| Expiry date | Mar 1, 2037 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10F39/199
Abstract
An image sensor includes a photoelectric conversion element including a first impurity region and a second impurity region, wherein the first impurity region contacts a first surface of a substrate, wherein the second impurity region has conductivity complementary to the first impurity region and is formed in the substrate and below the first impurity region; a pillar formed over the photoelectric conversion element; a transfer gate formed over the photoelectric conversion element to surround the pillar; and a channel layer formed between the transfer gate and the pillar and contacting the photoelectric conversion element, wherein the channel layer contacts the first impurity region and has the same conductivity as the second impurity region.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.