Semiconductor device and method for fabricating thereof
US9929203B1 · kind B1 · utility
Assignee
Inventors
Key dates
| Filing date | Apr 27, 2017 |
| Grant date | Mar 27, 2018 |
| Priority date | — |
| Expiry date | Apr 27, 2037 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10F39/807
Abstract
A semiconductor device and a method for fabricating thereof are provided. In the method for fabricating the semiconductor device, at first, a first semiconductor wafer including a first oxide layer and a second semiconductor wafer including a second oxide layer are provided. Next, the second oxide layer is bonded with the first oxide layer. Then, a through via is formed to through the second oxide layer and the first oxide layer, so as to form a sidewall cut on a sidewall of the through via at an interface of the first oxide layer and the second oxide layer. Then, an ashing operation is performed on the sidewall of the through via to form a protection layer on the sidewall of the through via. After the ashing operation is performed, a conductive material is deposited on the through via.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.