Method of optimizing an interface for processing of an organic semiconductor
US9929215B2 · kind B2 · utility
1Cited by
13References
20Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Apr 21, 2017 |
| Grant date | Mar 27, 2018 |
| Priority date | — |
| Expiry date | Apr 21, 2037 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10K71/233
Abstract
A method of forming an organic semiconductor includes forming a thin film transistor (“TFT”) backplane; forming a pixel well over the TFT backplane using a photoresist; performing a first plasma etch of the pixel well; stripping the photoresist in the pixel well; performing a second plasma etch of the pixel well; performing a first wash of the pixel well; exposing the pixel well to ultraviolet light; performing a second wash of the pixel well; and forming an organic photodiode in the pixel well.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.