Semiconductor device and method of making a semiconductor device
US9929263B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Dec 9, 2016 |
| Grant date | Mar 27, 2018 |
| Priority date | — |
| Expiry date | Dec 9, 2036 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D84/811
Abstract
A semiconductor device and a method of making the same. The device includes a substrate having an AlGaN layer located on one or more GaN layers, for forming a two dimensional electron gas at an interface between the AlGaN layer and the GaN layer. The device also includes a source contact. The device further includes a drain contact. The device also includes a gate contact located between the source contact and the drain contact. The gate contact includes a gate electrode. The gate contact also includes an electrically insulating layer located between the gate electrode and the AlGaN layer. The insulating layer includes at least one aperture for allowing holes generated during an off-state of the device to exit the device through the gate electrode.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.