Precursor and process design for photo-assisted metal atomic layer deposition (ALD) and chemical vapor deposition (CVD)
US9932671B2 · kind B2 · utility
8Cited by
1References
8Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Mar 27, 2014 |
| Grant date | Apr 3, 2018 |
| Priority date | — |
| Expiry date | Mar 27, 2034 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D30/024
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
Precursor and process design for photo-assisted metal atomic layer deposition (ALD) and chemical vapor deposition (CVD) is described. In an example, a method of fabricating a thin metal film involves introducing precursor molecules proximate to a surface on or above a substrate, each of the precursor molecules having one or more metal centers surrounded by ligands. The method also involves depositing a metal layer on the surface by dissociating the ligands from the precursor molecules using a photo-assisted process.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.