Scanning electron microscope system capable of measuring in-cell overlay offset using high-energy electron beam and method thereof
US9934939B2 · kind B2 · utility
4Cited by
7References
13Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Aug 20, 2014 |
| Grant date | Apr 3, 2018 |
| Priority date | — |
| Expiry date | Oct 16, 2034 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01J2237/2817
- WIPO fieldMeasurement
- WIPO sectorInstruments
Abstract
A method of measuring an overlay offset using a scanning electron microscope system includes: scanning an in-cell region, which includes a lower structure and an upper structure stacked in a sample, using a primary electron beam with a landing energy of at least 10 kV; detecting electrons emitted from the scanned in-cell region; and measuring an overlay offset with respect to overlapping patterns included in the in-cell region using an image of the in-cell region that is generated based on the detected electrons emitted from the scanned in-cell region.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.