Trench liner for removing impurities in a non-copper trench
US9935006B2 · kind B2 · utility
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1References
20Claims
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Assignee
Inventors
Key dates
| Filing date | Mar 2, 2017 |
| Grant date | Apr 3, 2018 |
| Priority date | — |
| Expiry date | Mar 2, 2037 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/76807
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
The present disclosure involves a method of fabricating a semiconductor device in a semiconductor technology node that is 5-nanometer or smaller. An opening is formed that extends through a plurality of layers over a substrate. A barrier layer is formed on surfaces of the opening. A liner layer is formed over the barrier layer in the opening. The barrier layer and the liner layer have different material compositions. The opening is filled with a non-copper metal material. The non-copper material is formed over the liner layer. In some embodiments, the non-copper metal material includes cobalt.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.