Radio frequency device packages and methods of formation thereof

US9935065B1 · kind B1 · utility

Assignee

• Infineon Technologies AG · DE

Inventors

• Ashutosh Baheti · Munich, DE
• Saverio Trotta · Hersbruck, DE
• Werner Reiss · Bad Feilnbach, DE

Key dates

• Filing date: Dec 21, 2016
• Grant date: Apr 3, 2018
• Expiry date: Dec 21, 2036

Classification

• Technology area (CPC H): Electricity
• CPC primary: H01L2924/15321
• WIPO field: Semiconductors
• WIPO sector: Electrical engineering

Abstract

A semiconductor device package includes an integrated circuit chip comprising a radio frequency device. The radio frequency device includes active circuitry at a first surface of the integrate circuit chip. An antenna substrate is disposed over the first surface of the integrated circuit. The antenna substrate includes a first conductive layer disposed over the first surface of the integrated circuit chip. The first conductive layer includes a first transmission line electrically coupled to the integrated circuit chip. A first laminate layer is disposed over the first conductive layer. The first laminate layer overlaps a first part of the first transmission line. A second conductive layer is disposed over the first laminate layer. The second conductive layer includes a first opening overlapping a second part of the first transmission line. A second laminate layer is disposed over the second conductive layer. A first antenna is disposed over the second laminate layer and overlaps the first opening, the second part of the first transmission line, and the integrated circuit chip.