Patent · US Active

Laser sintered interconnections between die

US9935079B1 · kind B1 · utility

12Cited by
14References
13Claims
0Family size

Assignee

Inventors

Key dates

Filing dateDec 8, 2016
Grant dateApr 3, 2018
Priority date
Expiry dateDec 8, 2036

Classification

  • Technology area (CPC H)Electricity
  • CPC primaryH01L2924/2075
  • WIPO fieldSemiconductors
  • WIPO sectorElectrical engineering

Abstract

Embodiments of a microelectronic packaged device and methods of making are provided, where the microelectronic packaged device includes a system package comprising a first die and a second die, wherein the first die and the second die are laterally positioned to one another, and the first die and the second die are laterally separated from one another by mold compound; and a conductive trace formed between a first conductive surface on an exposed surface of the first die and a second conductive surface on an exposed surface of the second die, wherein the conductive trace is laser sintered directly on the first conductive surface, on a portion of the exposed surface of the first die, on a portion of a top surface of the mold compound, on a portion of the exposed surface of the second die, and on the second conductive surface.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.