Semiconductor device
US9935099B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Dec 2, 2015 |
| Grant date | Apr 3, 2018 |
| Priority date | — |
| Expiry date | Dec 2, 2035 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D62/86
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
The present invention provides a semiconductor device including a semiconductor substrate, a first well, a second well, a gate electrode, an oxide semiconductor structure and a diode. The first well is disposed in the semiconductor substrate and has a first conductive type, and the second well is also disposed in the semiconductor substrate, adjacent to the first well, and has a second conductive type. The gate electrode is disposed on the first well. The oxide semiconductor structure is disposed on the semiconductor substrate and electrically connected to the second well. The diode is disposed between the first well and the second well.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.