Structure and formation method of semiconductor device structure
US9935173B1 · kind B1 · utility
Assignee
Inventors
Key dates
| Filing date | Nov 29, 2016 |
| Grant date | Apr 3, 2018 |
| Priority date | — |
| Expiry date | Nov 29, 2036 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D64/017
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
Structures and formation methods of a semiconductor device structure are provided. A method for forming a semiconductor device structure includes patterning a semiconductor substrate to form a fin structure. The method also includes forming a sacrificial material over the fin structure. The method further includes forming spacer elements adjoining sidewalls of the sacrificial material. Furthermore, the method includes removing the sacrificial material so that a trench is formed between the spacer elements. The method also includes forming a gate dielectric layer in the trench. The method further includes forming a work function layer in the trench to cover the gate dielectric layer. In addition, the method includes depositing a tungsten bulk layer with a precursor to fill the trench. The precursor includes a tungsten-containing material that is substantially free of fluoride.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.