Hall effect device

US9935259B2 · kind B2 · utility

Assignee

• Infineon Technologies AG · DE

Inventors

• Stefan Kolb · Unterschleißheim, DE
• Markus Eckinger · Regenstauf, DE

Key dates

• Filing date: Oct 25, 2017
• Grant date: Apr 3, 2018
• Expiry date: Oct 25, 2037

Classification

• Technology area (CPC H): Electricity
• CPC primary: H10N59/00
• WIPO field: Measurement
• WIPO sector: Instruments

Abstract

A hall effect device includes an active Hall region in a semiconductor substrate, and at least four terminal structures, each terminal structure including a switchable supply contact element and a sense contact element, wherein each supply contact element includes a transistor element with a first transistor terminal, a second transistor terminal, and a control terminal, wherein the second transistor terminal contacts the active Hall region or extends in the active Hall region; and wherein the sense contact elements are arranged in the active Hall region and neighboring to the switchable supply contact elements.