Magnetic tunnel junction element and manufacturing method therefor
US9935262B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Apr 29, 2015 |
| Grant date | Apr 3, 2018 |
| Priority date | — |
| Expiry date | Apr 29, 2035 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10N50/10
- WIPO fieldComputer technology
- WIPO sectorElectrical engineering
Abstract
A magnetic tunnel junction device and a manufacturing method therefor are provided. The magnetic tunnel junction device comprises: a seed layer having an FCC (001) crystal structure; a first ferromagnetic layer located on the seed layer and having perpendicular magnetic anisotropy; a tunneling barrier layer located on the first ferromagnetic layer; and a second ferromagnetic layer located on the tunneling barrier layer and having perpendicular magnetic anisotropy, wherein the first ferromagnetic layer has a BCC (001) crystal structure and does not have boron. Therefore, the magnetic tunnel junction device, which is structurally and thermally more stable, can be provided by using the seed layer configured to assist the crystal growth of a boron-free magnetic layer in a BCC (001) direction and provide perpendicular magnetic anisotropy thereto, that is, W2N or TaN which is a nitrogen-doped metal material having a cubic crystal structure and having a similar lattice constant to that of a magnetic layer material.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.