Stress decoupled piezoresistive relative pressure sensor and method for manufacturing the same
US9938135B2 · kind B2 · utility
Assignee
Inventor
Key dates
| Filing date | Jun 21, 2017 |
| Grant date | Apr 10, 2018 |
| Priority date | — |
| Expiry date | Jun 21, 2037 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG01L9/00
- WIPO fieldMicro-structural and nano-technology
- WIPO sectorChemistry
Abstract
Embodiments provide a MEMS (Micro Electro Mechanical System) pressure sensor comprising a semiconductor substrate, wherein the semiconductor substrate comprises a stress decoupling structure adapted to stress decouple a first portion of the semiconductor substrate from a second portion of the semiconductor substrate, wherein the first portion of the semiconductor substrate comprises a first buried empty space, wherein the second portion of the semiconductor substrate comprises a second buried empty space, and wherein the semiconductor substrate comprises a pressure channel fluidically connecting the first buried empty space and the second buried empty space.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.