Semiconductor element and methods for manufacturing the same

US9938141B2 · kind B2 · utility

Assignee

• Infineon Technologies AG · DE

Inventors

• Christian Bretthauer · Munich, DE
• Dirk Meinhold · Dresden, DE

Key dates

• Filing date: Feb 23, 2016
• Grant date: Apr 10, 2018
• Expiry date: Feb 23, 2036

Classification

• Technology area (CPC B): Performing Operations; Transporting
• CPC primary: B81B2207/07
• WIPO field: Micro-structural and nano-technology
• WIPO sector: Chemistry

Abstract

A semiconductor element and method are provided such that the method includes providing a processed substrate arrangement including a processed semiconductor substrate and a metallization layer structure on a main surface of the processed semiconductor substrate. The method further includes release etching for generating a kerf in the metallization layer structure at a separation region in the processed semiconductor substrate, the separation region defining a border between a die region of the processed substrate arrangement and at least a second region of the processed substrate arrangement.