Photolithography method and system based on high step slope
US9939724B2 · kind B2 · utility
Assignee
Inventor
Key dates
| Filing date | Sep 3, 2013 |
| Grant date | Apr 10, 2018 |
| Priority date | — |
| Expiry date | Jul 1, 2034 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG03F7/2035
- WIPO fieldOptics
- WIPO sectorInstruments
Abstract
A photolithography method and system based on a high step slope are provided. The method includes: S1, manufacturing a sacrificial layer with a high step slope on a substrate; S2, adopting a spin-on PR coating process to cover the sacrificial layer with a photoresist layer to form a photolithographic layer; S3, forming a mask pattern and a compensation pattern on a mask; and S4, performing photolithography processes, by a photolithography machine, on the photolithographic layer. By forming a slope-top compensation pattern and a slope compensation pattern on a mask to perform photolithography on the substrate of a sacrificial layer, a relatively wide compensation pattern is set in a part of the top of the slope with a small thickness, thereby compensating the overexposure at the top of the slope, reducing the error in the photolithographic pattern, and improving the precision of photolithography of the high step slope.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.