Selective dry etch for directed self assembly of block copolymers
US9941121B1 · kind B1 · utility
Assignee
Inventors
Key dates
| Filing date | Jan 24, 2017 |
| Grant date | Apr 10, 2018 |
| Priority date | — |
| Expiry date | Jan 24, 2037 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/31138
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
Methods for preparing a patterned directed self-assembly layer generally include providing a substrate having a block copolymer layer including a first phase-separated polymer defining a first pattern in the block copolymer layer and a second phase-separated polymer defining a second pattern in the block copolymer layer. The block polymer layer is exposed to a gas pulsing carbon monoxide polymer. The gas pulsing is configured to provide multiple cycles of an etching plasma and a deposition plasma to selectively remove the second pattern of the second phase-separated polymer while leaving behind the first pattern of the first phase-separated polymer on the substrate.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.