Method of manufacturing a semiconductor device
US9941159B2 · kind B2 · utility
0Cited by
7References
20Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Sep 2, 2016 |
| Grant date | Apr 10, 2018 |
| Priority date | — |
| Expiry date | Sep 2, 2036 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG06F2119/02
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A method of making a semiconductor device includes forming a first opening in an insulating layer, forming a second opening in the insulating layer, forming a third opening in the insulating layer and filling the first opening, the second opening and the third opening with a conductive material. The first opening has a width and a length. The second opening has a width less than the length of the first opening, and is electrically connected to the first opening. The third opening has a width less than the width of the second opening, and is electrically connected to the second opening.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.