Method for manufacturing semiconductor structure
US9941186B2 · kind B2 · utility
1Cited by
16References
18Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Aug 4, 2016 |
| Grant date | Apr 10, 2018 |
| Priority date | — |
| Expiry date | Aug 4, 2036 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L2924/3511
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A method for manufacturing a semiconductor structure is disclosed. The method includes: providing a semiconductor substrate having a plurality of dies thereon; dispensing an underfill material and a molding compound to fill spaces beneath and between the dies; disposing a temporary carrier over the dies; thinning a thickness of the semiconductor substrate; performing back side metallization upon the thinned semiconductor substrate; removing the temporary carrier; and attaching a plate over the dies. An associated semiconductor structure is also disclosed.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.