Semiconductor device and method of manufacturing the semiconductor device
US9941273B2 · kind B2 · utility
Assignee
Inventor
Key dates
| Filing date | Jun 23, 2015 |
| Grant date | Apr 10, 2018 |
| Priority date | — |
| Expiry date | Jun 23, 2035 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D12/481
Abstract
A semiconductor device includes: a semiconductor substrate including a trench provided in a surface of the semiconductor substrate; a trench electrode provided in the trench; an interlayer insulating film covering a surface of the trench electrode and protruding from the surface of the semiconductor substrate; a Schottky electrode provided on the surface of the semiconductor substrate, provided in a position separated from the interlayer insulating film, and being in Schottky contact with the semiconductor substrate; an embedded electrode provided in a concave portion between the interlayer insulating film and the Schottky electrode and made of a metal different from a metal of the Schottky electrode; and a surface electrode covering the interlayer insulating film, the embedded electrode, and the Schottky electrode.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.