Semiconductor device and manufacturing method of semiconductor device
US9941366B2 · kind B2 · utility
0Cited by
2References
1Claims
0Family size
Assignee
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Key dates
| Filing date | Oct 14, 2014 |
| Grant date | Apr 10, 2018 |
| Priority date | — |
| Expiry date | Nov 22, 2034 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D62/8325
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
Described herein is a semiconductor device comprising: a semiconductor substrate; a trench provided at a surface of the semiconductor substrate; a first insulating layer covering an inner surface of the trench; and a second insulating layer located at a surface of the first insulating layer in the trench. A refraction index of the first insulating layer is larger than a refraction index of the second insulating layer.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.