Nanosheet and nanowire devices having source/drain stressors and methods of manufacturing the same
US9941405B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Nov 1, 2016 |
| Grant date | Apr 10, 2018 |
| Priority date | — |
| Expiry date | Nov 1, 2036 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D64/62
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A method of manufacturing a nanosheet or nanowire device from a stack including an alternating arrangement of sacrificial layers and channel layers on a substrate. The method includes deep etching portions of the stack to form electrode recesses for a source electrode and a drain electrode, forming conductive passivation layers in the electrode recesses, and epitaxially growing the source and drain electrodes in the electrode recesses. Each conductive passivation layer extends at least partially along a side of one of the electrode recesses. Portions of the substrate at lower ends of the electrode recesses are uncovered by the conductive passivation layers. The source and drain electrodes are grown from the substrate and the conductive passivation layers substantially inhibit the source and drain electrodes from being grown from the channel layers.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.