Photolithographic mask

US9946155B2 · kind B2 · utility

Assignee

• Semiconductor Manufacturing International (Shanghai) Corporation · CN

Inventors

• Boxiu Cai · Shanghai, CN
• Yi Huang · Shanghai, CN

Key dates

• Filing date: Oct 25, 2017
• Grant date: Apr 17, 2018
• Expiry date: Oct 25, 2037

Classification

• Technology area (CPC G): Physics
• CPC primary: G03F1/36
• WIPO field: Optics
• WIPO sector: Instruments

Abstract

A method is provided for fabricating a photolithographic mask. The method includes providing a transparent substrate; and forming an opaque layer on the transparent substrate. The method also includes writing layout patterns with at least one sub-resolution assistant feature with non-uniform size along a longitudinal direction to increase an adhesion force between the sub-resolution assistant feature with non-uniform size along the longitudinal direction and the transparent substrate in the opaque layer. Further, the method include cleaning residual matters generated by writing the layout patterns in the opaque layer. Further, the method also includes spin-drying the transparent substrate with the layout patterns and the sub-resolution assistant feature with non-uniform size along the longitudinal direction.