Self-referenced multibit MRAM cell having a synthetic antiferromagnetic storage layer
US9947381B2 · kind B2 · utility
0Cited by
0References
15Claims
0Family size
Assignee
Inventor
Key dates
| Filing date | May 28, 2015 |
| Grant date | Apr 17, 2018 |
| Priority date | — |
| Expiry date | May 28, 2035 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG11C11/5607
- WIPO fieldComputer technology
- WIPO sectorElectrical engineering
Abstract
A multibit MRAM cell including a magnetic tunnel junction including a sense layer having a freely orientable sense magnetization; a tunnel barrier layer; and a synthetic antiferromagnet storage layer having a first and second storage layer. The sense magnetization induces a dipolar field having a magnitude above a spin-flop field of the storage layer. The MRAM cell also includes aligning means for aligning the sense magnetization in a plurality of distinct orientations such as to encode a plurality of distinct logic states in the MRAM cell. The present disclosure also concerns a method for operating the multibit MRAM cell.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.