Semiconductor device and method of making a semiconductor device
US9947632B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Oct 27, 2016 |
| Grant date | Apr 17, 2018 |
| Priority date | — |
| Expiry date | Oct 27, 2036 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L2924/00014
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A semiconductor device and a method of making the same. The device includes a semiconductor substrate having a major surface, one or more contacts located on the major surface and an encapsulant covering at least the major surface. A peripheral edge of each contact defines a contact area on the major surface. The device also includes one or more bond pads located outside the encapsulant. Each bond pad is electrically connected to a respective contact located on the major surface of the substrate by a respective metal filled via that passes through the encapsulant. A sidewall of each respective metal filled via, at the point at which it meets the respective contact, falls inside the contact area defined by the respective contact when viewed from above the major surface of the substrate, whereby none of the metal filling each respective via extends outside the contact area of each respective contact.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.