Patent · US Active

Integrated circuits with components on both sides of a selected substrate and methods of fabrication

US9947688B2 · kind B2 · utility

1Cited by

9References

37Claims

0Family size

Assignee

pSemi Corporation · US

Inventors

James S. Cable · Del Mar, US
Anthony Mark Miscione · Ramona, US
Ronald E. Reedy · San Diego, US

Key dates

Filing date	Jun 20, 2012
Grant date	Apr 17, 2018
Priority date	—
Expiry date	Apr 29, 2034

Classification

Technology area (CPC H)Electricity
CPC primaryH01L2924/15192
WIPO fieldSemiconductors
WIPO sectorElectrical engineering

Abstract

Novel integrated circuits (SOI ICs), and methods for making and mounting the ICs are disclosed. In one embodiment, an IC comprises a first circuit layer of the IC formed from an active layer of an SOI wafer. The first circuit layer is coupled to a first surface of buffer layer, and a second surface of the buffer layer is coupled to a selected substrate comprising an insulating material. The selected substrate may be selected, without limitation, from the following types: sapphire, quartz, silicon dioxide glass, piezoelectric materials, and ceramics. A second circuit layer of the IC are formed, coupled to a second surface of the selected substrate. In one embodiment of a mounted IC, the first circuit layer is coupled to contact pads on a package substrate via solder bumps or copper pillars. The second circuit layer is coupled to contact pads on the package substrate via wire bonds.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.