ZnO-containing semiconductor structure and manufacturing thereof
US9947826B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Oct 7, 2016 |
| Grant date | Apr 17, 2018 |
| Priority date | — |
| Expiry date | Oct 7, 2036 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D62/86
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A method of manufacturing ZnO-containing semiconductor structure includes steps of: (a) forming a subsidiary lamination, including alternately laminating at least two periods of active oxygen layers and ZnO-containing semiconductor layers doped with at least one species of group 3B element; (b) alternately laminating said subsidiary lamination and AgO layer, sandwiching an active oxygen layer, to form lamination structure; and (c) carrying out annealing in atmosphere in which active oxygen exists and pressure is below 10−2 Pa, intermittently irradiating oxygen radical beam on a surface of said lamination structure, forming a p-type ZnO-containing semiconductor structure co-doped with said group 3B element and Ag.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.