Substrate with buffer layer for oriented nanowire growth
US9947829B2 · kind B2 · utility
3Cited by
7References
9Claims
0Family size
Assignee
Inventor
Key dates
| Filing date | Jun 27, 2011 |
| Grant date | Apr 17, 2018 |
| Priority date | — |
| Expiry date | Mar 18, 2032 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY10S977/762
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
The present invention provides a substrate (1) with a bulk layer (3) and a buffer layer (4) having a thickness of less than 2 μm arranged on the bulk layer (3) for growth of a multitude of nanowires (2) oriented in the same direction on a surface (5) of the buffer layer (4). A nanowire structure, a nanowire light emitting diode comprising the substrate (1) and a production method for fabricating the nanowire structure is also provided. The production method utilizes non-epitaxial methods for forming the buffer layer (4).
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.