Method for making nano-heterostructure
US9947869B2 · kind B2 · utility
Assignees
Inventors
Key dates
| Filing date | Jun 3, 2017 |
| Grant date | Apr 17, 2018 |
| Priority date | — |
| Expiry date | Jun 3, 2037 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY10S977/954
- WIPO fieldSurface technology, coating
- WIPO sectorChemistry
Abstract
The present disclosure relates to a method for making nanoscale heterostructure. The method includes: providing a support and forming a first carbon nanotube layer on the support, and the first carbon nanotube layer comprises a plurality of first source carbon nanotubes; forming a semiconductor layer on the first carbon nanotube layer; covering a second carbon nanotube layer on the semiconductor layer, and the second carbon nanotube layer comprises a plurality of second source carbon nanotubes; finding and labeling a first carbon nanotube in the first carbon nanotube layer and a second carbon nanotube in the second carbon nanotube layer; removing the plurality of first source carbon nanotubes and the plurality of second source carbon nanotubes; and annealing the multilayer structure.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.