MEMS structure with improved shielding and method

US9950921B2 · kind B2 · utility

Assignee

• mCube, Inc. · US

Inventors

• Te-Hsi Lee · San Jose, US
• Sudheer S. Sridharamurthy · San Jose, US
• Shingo Yoneoka · Cupertino, US
• Wenhua Zhang · Suzhou, CN

Key dates

• Filing date: Nov 2, 2015
• Grant date: Apr 24, 2018
• Expiry date: Nov 2, 2035

Classification

• Technology area (CPC B): Performing Operations; Transporting
• CPC primary: B81C2201/053
• WIPO field: Micro-structural and nano-technology
• WIPO sector: Chemistry

Abstract

An integrated circuit includes a substrate member having a surface region and a CMOS IC layer overlying the surface region. The CMOS IC layer has at least one CMOS device. The integrated circuit also includes a bottom isolation layer overlying the CMOS IC layer, a shielding layer overlying a portion of the bottom isolation layer, and a top isolation layer overlying a portion of the bottom isolation layer. The bottom isolation layer includes an isolation region between the top isolation layer and the shielding layer. The integrated circuit also has a MEMS layer overlying the top isolation layer, the shielding layer, and the bottom isolation layer. The MEMS layer includes at least one MEMS structure having at least one movable structure and at least one anchored structure. The at least one anchored structure is coupled to a portion of the top isolation layer, and the at least one movable structure overlies the shielding layer.